Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV
Vol. 129 No. 1D (2020), Original Article
Vol. 129 No. 1D (2020)

Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV

Original Article
https://doi.org/10.26459/hueuni-jns.v129i1D.5765
Published 2020-08-05
V. Q. Nha
Hue University, Quang Tri Branch, Dien Bien Phu St., Dong Ha, Quang Tri, VietNam
L. V. Thang
Hue University, Quang Tri Branch, Dien Bien Phu St., Dong Ha, Quang Tri, VietNam
H. T. Thuy Linh
Hue University, Quang Tri Branch, Dien Bien Phu St., Dong Ha, Quang Tri, VietNam
N. I. Gorbachuk
Belarusian State University, 4 Nezavisimosti Avenue, Minsk, Belarus
N. X. Cuong
School of Engineering and Technology, Hue University, 1 Dien Bien Phu St., Hue, VietNam
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Keywords

silicon dioxide
MOS structures
irradiation
fluence
radiation-disturbed layer

How to Cite

1.
Nha VQ, Thang LV, Thuy Linh HT, Gorbachuk NI, Cuong NX. Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV. hueuni-jns [Internet]. 2020Aug.5 [cited 2024Nov.14];129(1D):71-5. Available from: http://222.255.146.83/index.php/hujos-ns/article/view/5765
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Abstract

This paper presents the change in the volt-farad characteristics of the Al/SiO2/n-Si structure irradiated with helium ions with the energy of 5 MeV in the frequencies of 1, 10, 100, and 1000 kHz. The voltage dependence of the capacitance and the frequency dependence of the dissolution angle are measured on an LCR Agilent E4980A and Agilent 4285A meter. The hodograph of the irradiated structure shows that there is a formation of a quasi-continuous radiation-disturbed layer at a fluence of 1012 cm–2 with U < –7 V and 1013 cm–2 with U < –20 V, which enhances the speed of charged particles, thereby increasing the reverse current in the irradiated structure.

https://doi.org/10.26459/hueuni-jns.v129i1D.5765
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