Effect of biaxial strain on electronic and optical properties of GaSe monolayer
Vol. 129 No. 1C (2020), Original Article
Vol. 129 No. 1C (2020)

Effect of biaxial strain on electronic and optical properties of GaSe monolayer

Original Article
https://doi.org/10.26459/hueuni-jns.v129i1C.5882
Published 2020-07-03
Vo Thi Tuyet Vi
University of Education, Hue University, 34 Le Loi St., Hue, Vietnam
Nguyen Van Chuong
Military Technology Academy, 236 Hoang Quoc Viet, Caugiay, Hanoi, Vietnam
Nguyen Van Hieu
University of Science and Education, The University of Da Nang, 459 To Duc Thang, Hoa Khanh Nam, Lien Chieu, Da Nang, Vietnam
Nguyen Ngoc Hieu
Duy Tan University, 254 Nguyen Van Linh, Thac Gian, Thanh Khe, Da Nang, Vietnam
PDF (Vietnamese)

How to Cite

1.
Vi VTT, Chương NV, Hiếu NV, Hiếu NN. Effect of biaxial strain on electronic and optical properties of GaSe monolayer. hueuni-jns [Internet]. 2020Jul.3 [cited 2024Nov.23];129(1C):109-16. Available from: http://222.255.146.83/index.php/hujos-ns/article/view/5882
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Abstract

In this paper, using density functional theory, we systematically investigate the effect of biaxial strain on electronic and optical properties of GaSe two-dimensional layered material with monolayer structure. The calculations indicate that monolayer GaSe is an indirect semiconductor with a bandgap of 1.903 eV at equilibrium. The electronic properties of the GaSe monolayer, especially the bandgap energy, depend strongly on the biaxial strain. The GaSe monolayer has a wide absorption spectrum, from the visible light region to the near-ultraviolet one. Besides, the strain engineering significantly changes the intensity as well as the position of the peaks in the optical spectra of monolayer GaSe.

https://doi.org/10.26459/hueuni-jns.v129i1C.5882
PDF (Vietnamese)

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